Band alignment at the i-ZnO/CdS interface in Cu(In,Ga)(S,Se)2 thin-film solar cells
Identifieur interne : 00A567 ( Main/Repository ); précédent : 00A566; suivant : 00A568Band alignment at the i-ZnO/CdS interface in Cu(In,Ga)(S,Se)2 thin-film solar cells
Auteurs : RBID : Pascal:04-0166788Descripteurs français
- Pascal (Inist)
- 8460J, 7960B, 7120N, 7870, Etude expérimentale, Zinc composé, Semiconducteur II-VI, Semiconducteur bande interdite large, Cuivre composé, Indium composé, Gallium composé, Cadmium composé, Bande conduction, Couche mince semiconductrice, Niveau Fermi, Cellule solaire, Bande valence, Spectre photoélectron RX, Spectre photoélectron UV, Spectre photoémission inverse, Semiconducteur ternaire.
English descriptors
- KwdEn :
- Cadmium compounds, Conduction bands, Copper compounds, Experimental study, Fermi level, Gallium compounds, II-VI semiconductors, Indium compounds, Inverse photoemission spectra, Semiconductor thin films, Solar cells, Ternary semiconductors, Ultraviolet photoelectron spectra, Valence bands, Wide band gap semiconductors, X-ray photoelectron spectra, Zinc compounds.
Abstract
The interface between the i-ZnO layer and the CdS buffer in Cu(In,Ga)(S,Se)2 thin-film solar cells from the Shell Solar baseline process has been investigated using ultraviolet- and x-ray photoelectron spectroscopy and inverse photoemission. Combining both techniques, a direct determination of the conduction and valence band offsets at the interface is possible. Different from existing models, we find a flat conduction band alignment (i.e., a conduction band offset of 0.10±0.15 eV), ∼0.5 eV above the Fermi level, and a valence band offset of 0.96±0.15 eV. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Band alignment at the i-ZnO/CdS interface in Cu(In,Ga)(S,Se)<sub>2</sub> thin-film solar cells</title><author><name sortKey="Weinhardt, L" uniqKey="Weinhardt L">L. Weinhardt</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, 97074 Wurzburg, Germany</s1><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, 97074 Wurzburg</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Basse-Franconie</region><settlement type="city">Wurtzbourg</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, 97074 Wurzburg, Germany</s1></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, 97074 Wurzburg</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Basse-Franconie</region><settlement type="city">Wurtzbourg</settlement></placeName></affiliation></author><author><name sortKey="Heske, C" uniqKey="Heske C">C. Heske</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, 97074 Wurzburg, Germany</s1><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, 97074 Wurzburg</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Basse-Franconie</region><settlement type="city">Wurtzbourg</settlement></placeName></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Deparment of Chemistry, University of Nevada, Las Vegas, Nevada 89154-4003</s1><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nevada</region></placeName><wicri:cityArea>Deparment of Chemistry, University of Nevada, Las Vegas</wicri:cityArea></affiliation></author><author><name sortKey="Umbach, E" uniqKey="Umbach E">E. Umbach</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, 97074 Wurzburg, Germany</s1><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, 97074 Wurzburg</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Basse-Franconie</region><settlement type="city">Wurtzbourg</settlement></placeName></affiliation></author><author><name sortKey="Niesen, T P" uniqKey="Niesen T">T. P. Niesen</name></author><author><name sortKey="Visbeck, S" uniqKey="Visbeck S">S. Visbeck</name></author><author><name sortKey="Karg, F" uniqKey="Karg F">F. Karg</name></author></titleStmt><publicationStmt><idno type="inist">04-0166788</idno><date when="2004-04-19">2004-04-19</date><idno type="stanalyst">PASCAL 04-0166788 AIP</idno><idno type="RBID">Pascal:04-0166788</idno><idno type="wicri:Area/Main/Corpus">00BB20</idno><idno type="wicri:Area/Main/Repository">00A567</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cadmium compounds</term><term>Conduction bands</term><term>Copper compounds</term><term>Experimental study</term><term>Fermi level</term><term>Gallium compounds</term><term>II-VI semiconductors</term><term>Indium compounds</term><term>Inverse photoemission spectra</term><term>Semiconductor thin films</term><term>Solar cells</term><term>Ternary semiconductors</term><term>Ultraviolet photoelectron spectra</term><term>Valence bands</term><term>Wide band gap semiconductors</term><term>X-ray photoelectron spectra</term><term>Zinc compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8460J</term><term>7960B</term><term>7120N</term><term>7870</term><term>Etude expérimentale</term><term>Zinc composé</term><term>Semiconducteur II-VI</term><term>Semiconducteur bande interdite large</term><term>Cuivre composé</term><term>Indium composé</term><term>Gallium composé</term><term>Cadmium composé</term><term>Bande conduction</term><term>Couche mince semiconductrice</term><term>Niveau Fermi</term><term>Cellule solaire</term><term>Bande valence</term><term>Spectre photoélectron RX</term><term>Spectre photoélectron UV</term><term>Spectre photoémission inverse</term><term>Semiconducteur ternaire</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The interface between the i-ZnO layer and the CdS buffer in Cu(In,Ga)(S,Se)<sub>2</sub> thin-film solar cells from the Shell Solar baseline process has been investigated using ultraviolet- and x-ray photoelectron spectroscopy and inverse photoemission. Combining both techniques, a direct determination of the conduction and valence band offsets at the interface is possible. Different from existing models, we find a flat conduction band alignment (i.e., a conduction band offset of 0.10±0.15 eV), ∼0.5 eV above the Fermi level, and a valence band offset of 0.96±0.15 eV. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>16</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Band alignment at the i-ZnO/CdS interface in Cu(In,Ga)(S,Se)<sub>2</sub> thin-film solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>WEINHARDT (L.)</s1></fA11><fA11 i1="02" i2="1"><s1>HESKE (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>UMBACH (E.)</s1></fA11><fA11 i1="04" i2="1"><s1>NIESEN (T. P.)</s1></fA11><fA11 i1="05" i2="1"><s1>VISBECK (S.)</s1></fA11><fA11 i1="06" i2="1"><s1>KARG (F.)</s1></fA11><fA14 i1="01"><s1>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, 97074 Wurzburg, Germany</s1><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, 97074 Wurzburg, Germany</s1><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Deparment of Chemistry, University of Nevada, Las Vegas, Nevada 89154-4003</s1><sZ>2 aut.</sZ></fA14><fA14 i1="04"><s1>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, 97074 Wurzburg, Germany</s1></fA14><fA14 i1="05"><s1>Shell Solar, D-81739 Munich, Germany</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>3175-3177</s1></fA20><fA21><s1>2004-04-19</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0166788</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The interface between the i-ZnO layer and the CdS buffer in Cu(In,Ga)(S,Se)<sub>2</sub> thin-film solar cells from the Shell Solar baseline process has been investigated using ultraviolet- and x-ray photoelectron spectroscopy and inverse photoemission. Combining both techniques, a direct determination of the conduction and valence band offsets at the interface is possible. Different from existing models, we find a flat conduction band alignment (i.e., a conduction band offset of 0.10±0.15 eV), ∼0.5 eV above the Fermi level, and a valence band offset of 0.96±0.15 eV. © 2004 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="3"><s0>001B70I60B</s0></fC02><fC02 i1="03" i2="3"><s0>001B70A20N</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H70</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8460J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7960B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7120N</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7870</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Zinc composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Zinc compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur II-VI</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>II-VI semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Cuivre composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Copper compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Cadmium composé</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Cadmium compounds</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Bande conduction</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Conduction bands</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Couche mince semiconductrice</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Semiconductor thin films</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Niveau Fermi</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Fermi level</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Cellule solaire</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Solar cells</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Bande valence</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Valence bands</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>X-ray photoelectron spectra</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Spectre photoélectron UV</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Ultraviolet photoelectron spectra</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Spectre photoémission inverse</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Inverse photoemission spectra</s0></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Semiconducteur ternaire</s0></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Ternary semiconductors</s0></fC03><fN21><s1>110</s1></fN21><fN47 i1="01" i2="1"><s0>0415M000177</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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